Hm. This says their 17nm DDR5 yields have surpassed 90%. HBM3E yields appears to be low. 4F2 targets 10nm DRAM which doesn’t require ASML’s most advanced stuff - EUV, AFAIK. It’s done with DUV which China has plenty of and they also got some domestic machines coming out this year. I see info that Micron has pivoted away from 4F2 but SK and Samsung are actively developing it for their next processes. Do you have anything that shows otherwise? If they’re still developing it, why would they do it if 4F2 is worse than 6F2?